The Global Gallium Nitride Semiconductor Device Market was valued at USD 16.68 billion in 2016 and is projected to reach USD 25.33 billion by 2025, growing at a CAGR of 4.75% from 2017 to 2025.
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes. GaN has the potential to reduce energy loss of the power devices; it possesses high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. GaN semiconductor devices possesses low resistance giving lower conductance losses, faster device yielding less switching losses, less capacitance, less power needed to drive the current, and is cost efficient.
Sample Infographics:
Market Dynamics:
1. Market Drivers
1.1 Increasing use of GaN in 5G infrastructure
1.2 Application in electric and hybrid electric vehicle
1.3 Rising adoption of GaN in RF-power electronics
1.4 Increasing adoption of GaN RF semiconductors in various industries
1.5 Rising GaN power semiconductor revenue due to consumer electronics and automotive market
2. Market Restraints
2.1 High material and fabrication cost
2.2 Design complexities for better efficiency
2.3 Availability of SiC in high-voltage semiconductor applications
Market Segmentation:
The Global Gallium Nitride Semiconductor Device Market is segmented on the device type, wafer size, application, vertical, and region.
1. Device Type:
1.1 Power Semiconductor
1.2 RF Semiconductor
1.3 Opto Semiconductor
2. By Wafer Size:
2.1 2 Inch
2.2 4 Inch
2.3 6-Inch and Above
3. By Application:
3.1 Radio Frequency
3.2 Power Drivers, Lighting and Laser
3.3 Supply and Inverter
3.4 Others
4. By Vertical:
4.1 Military, Defense, and Aerospace
4.2 Automotive
4.3 Consumer and Enterprise
4.4 Medical
4.5 Industrial
4.6 Telecommunication
4.7 Renewable
4.8 Others
5. By Region:
5.1 North America (U.S., Canada, Mexico)
5.2 Europe (Germany, UK, France, Rest of Europe)
5.3 Asia Pacific (China, India, Japan, Rest of Asia Pacific)
5.4 Latin America (Brazil, Argentina, Rest of Latin America)
5.5 Middle East & Africa
Competitive Landscape:
The major players in the market are as follows:
1. Qorvo
2. Infineon
3. Samsung
4. Mitsubishi Electric
5. Efficient Power Conversion (EPC)
6. Cree
7. Microsemi
8. Analog Devices
9. Macom
10. Panasonic
11. Sumitomo Electric
12. Texas Instruments
13. GaN Systems
14. Nichia
15. Northrop Grumman Corporation
16. Dialog Semiconductor
17. Epistar
These major players have adopted various organic as well as inorganic growth strategies such as mergers & acquisitions, new product launches, expansions, agreements, joint ventures, partnerships, and others to strengthen their position in this market.
RESEARCH METHODOLOGY OF VERIFIED MARKET INTELLIGENCE:
Research study on the Global Gallium Nitride Semiconductor Device Market was performed in five phases which include Secondary research, Primary research, subject matter expert advice, quality check and final review.
The market data was analyzed and forecasted using market statistical and coherent models. Also market shares and key trends were taken into consideration while making the report. Apart from this, other data models include Vendor Positioning Grid, Market Time Line Analysis, Market Overview and Guide, Company Positioning Grid, Company Market Share Analysis, Standards of Measurement, Top to Bottom Analysis and Vendor Share Analysis.
To know more about the Research Methodology of Verified Market Intelligence and other aspects of the research study, kindly get in touch with our sales team
INTRODUCTION OF GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET
1.1 Overview of the Market
1.2 Scope of Report
1.3 Assumptions
2 EXECUTIVE SUMMARY
3 RESEARCH METHODOLOGY OF VERIFIED MARKET INTELLIGENCE
3.1 Data Mining
3.2 Validation
3.3 Primary Interviews
3.4 List of Data Sources
4 GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET OUTLOOK
4.1 Overview
4.2 Market Dynamics
4.2.1 Drivers
4.2.2 Restraints
4.2.3 Opportunities
4.3 Porters Five Force Model
4.4 Value Chain Analysis
4.5 Regulatory Framework
5 GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET DEVICE TYPE
5.1 Power Semiconductor
5.2 RF Semiconductor
5.3 Opto Semiconductor
6 GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET BY WAFER SIZE
6.1 2 Inch
6.2 4 Inch
6.3 6-Inch and Above
7 GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET BY APPLICATION
7.1 Radio Frequency
7.2 Power Drivers, Lighting and Laser
7.3 Supply and Inverter
7.4 Others
8 GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET BY VERTICAL
8.1 Military, Defense, and Aerospace
8.2 Automotive
8.3 Consumer and Enterprise
8.4 Medical
8.5 Industrial
8.6 Telecommunication
8.7 Renewable
8.8 Others
9 GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET, BY GEOGRAPHY
9.1 Overview
9.2 North America Regional Market Estimates and Forecasts, 2012 - 2025
9.2.1 U.S.
9.2.2 Canada
9.2.3 Mexico
9.3 Europe Regional Market Estimates and Forecasts, 2012 - 2025
9.3.1 Germany
9.3.2 U.K.
9.3.3 France
9.3.4 Rest of Europe
9.4 Asia Pacific Regional Market Estimates and Forecasts, 2012 - 2025
9.4.1 China
9.4.2 Japan
9.4.3 India
9.4.4 Rest of Asia Pacific
9.5 Latin America Regional Market Estimates and Forecasts, 2012 - 2025
9.5.1 Brazil
9.5.2 Argentina
9.6 Rest of the World Regional Market Estimates and Forecasts, 2012 â€" 2025
10 GLOBAL GALLIUM NITRIDE SEMICONDUCTOR DEVICE MARKET COMPETITIVE LANDSCAPE
10.1 Overview
10.2 Company Market Share
10.3 Vendor Landscape
10.4 Key Development Strategies
11 COMPANY PROFILES
11.1 Qorvo
11.1.1 Overview
11.1.2 Financial Performance
11.1.3 Product Outlook
11.1.4 Key Developments
11.2 Infineon
11.2.1 Overview
11.2.2 Financial Performance
11.2.3 Product Outlook
11.2.4 Key Developments
11.3 Samsung
11.3.1 Overview
11.3.2 Financial Performance
11.3.3 Product Outlook
11.3.4 Key Developments
11.4 Mitsubishi Electric
11.4.1 Overview
11.4.2 Financial Performance
11.4.3 Product Outlook
11.4.4 Key Developments
11.5 Efficient Power Conversion (EPC)
11.5.1 Overview
11.5.2 Financial Performance
11.5.3 Product Outlook
11.5.4 Key Developments
11.6 Cree
11.6.1 Overview
11.6.2 Financial Performance
11.6.3 Product Outlook
11.6.4 Key Developments
11.7 Microsemi
11.7.1 Overview
11.7.2 Financial Performance
11.7.3 Product Outlook
11.7.4 Key Developments
11.8 Analog Devices
11.8.1 Overview
11.8.2 Financial Performance
11.8.3 Product Outlook
11.8.4 Key Developments
11.9 Macom
11.9.1 Overview
11.9.2 Financial Performance
11.9.3 Product Outlook
11.9.4 Key Developments
11.10 Panasonic
11.10.1 Overview
11.10.2 Financial Performance
11.10.3 Product Outlook
11.10.4 Key Developments
11.11 Sumitomo Electric
11.11.1 Overview
11.11.2 Financial Performance
11.11.3 Product Outlook
11.11.4 Key Developments
11.12 Texas Instruments
11.12.1 Overview
11.12.2 Financial Performance
11.12.3 Product Outlook
11.12.4 Key Developments
11.13 GaN Systems
11.13.1 Overview
11.13.2 Financial Performance
11.13.3 Product Outlook
11.13.4 Key Developments
11.14 Nichia
11.14.1 Overview
11.14.2 Financial Performance
11.14.3 Product Outlook
11.14.4 Key Developments
11.15 Northrop Grumman Corporation
11.15.1 Overview
11.15.2 Financial Performance
11.15.3 Product Outlook
11.15.4 Key Developments
11.16 Dialog Semiconductor
11.16.1 Overview
11.16.2 Financial Performance
11.16.3 Product Outlook
11.16.4 Key Developments
11.17 Epistar
11.17.1 Overview
11.17.2 Financial Performance
11.17.3 Product Outlook
11.17.4 Key Developments
12 Appendix
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